Low‐Temperature Synthesis of Silicon Oxynitride‐Doped Si for Tunable Bragg Gratings Homogeneously Deposited on Si, SiO₂, and Borosilicate Substrates and the tip of SM and PM Optical Fibers

Optical tunability and repeatability are essential in fabricating optoelectronic devices from waveguides to Bragg gratings (BGs) for high-energy, high-power, mode-locking, sensing applications. For this purpose, a controlled adjustment the optical properties, including refractive index of deposited nanolayers, becomes critical. This study reveals that silicon oxynitride (SiON) doping into (Si) offers new way preparation novel Si-based with an emphasis on BGs filtering particular portion electromagnetic spectrum, wavelengths 800, 976, 1550, 1840 nm. Control incident angle dependence is demonstrated at Watt-level wavelength 976 Amorphous SiON-doped Si layers alternating SiO2 can be synthesized bulk substrates different fibers relatively low temperatures wide narrow bandwidths. The high reflectivity over −22 dB reflection using typical fibers, standardsingle-mode high-birefringent polarization-maintaining (PM) fibers. polarized transmission measurement BG PMfiber shows do not deteriorate PM strongly yielding beat length 1.68 mm birefringence 9.2 × 10−4 telecom C band.